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| Product Description The SGA-6389 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain SGA-6389 SGA-6389Z Pb RoHS Compliant & Green Package DC-4500 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features * Now available in Lead Free, RoHS Compliant, & Green Packaging * Broadband Operation: DC-4500 MHz * Cascadable 50ohm * Patented SiGe Technology * Operates From Single Supply * Low Thermal Resistance Package Gain & Return Loss vs. Frequency VD= 4.0 V, ID= 75 mA (Typ.) 20 GAIN 0 -10 ORL IRL 15 Gain (dB) 10 5 0 0 1 2 3 Frequency (GHz) 4 5 -20 -30 -40 Return Loss (dB) Applications * PA Driver Amplifier * Cellular, PCS, GSM, UMTS * IF Amplifier * Wireless Data, Satellite Units dB Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 14.1 Typ. 15.5 14.0 13.3 20.2 18.9 35.2 32.6 4500 1950 MHz 1950 MHz 1950 MHz 4.6 72 16.0 11.9 4.2 4.9 80 97 5.4 88 Max. 17.3 Symbol G Parameter Small Signal Gain P1dB OIP3 Output Pow er at 1dB Compression Output Third Order Intercept Point dBm dBm MHz dB dB dB V mA C/W Bandw idth Determined by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 8v RBIAS = 39 ohms ID = 80mA Typ. TL = 25C Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100620 Rev. G SGA-6389 DC-4500 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Frequency (MHz) Symbol Parameter Unit 100 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 8v RBIAS = 39 ohms dB dBm dBm dB dB dB dB 15.7 36.6 20.1 22.3 14.7 20.4 4.0 15.6 36.0 20.4 27.5 14.5 20.2 3.7 15.5 35.2 20.2 27.4 14.8 20.3 3.8 14.0 32.6 18.9 16.0 11.9 20.1 4.2 13.3 31.2 18.1 13.7 10.8 19.7 4.4 12.0. 26.8 15.5 11.0 10.4 18.2 4.8 Test Conditions: ID = 80mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Absolute Maximum Ratings Noise Figure vs. Frequency VD= 4.9 V, ID= 80 mA 7 Noise Figure (dB) 6 5 4 3 Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ) Operati ng T mp. Range (TL) e Absolute Limit 160 mA 7V +18 dBm +150C -40C to +85C +150C Max. Storage Temp. TL=+25C 2 0 1 2 Frequency (GHz) 3 4 Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l T ke i nto account out of band VSWR presented by devi ces a such as SAW fi lters to determi ne maxi mum RF i nput power. Reflected harmoni c levels i n saturati on are si gni fi cant. OIP3 vs. Frequency VD= 4.9 V, ID= 80 mA 40 36 OIP3(dBm) 32 28 +25C P1dB vs. Frequency VD= 4.9 v, ID= 80 mA 22 20 P1dB(dBm) 18 16 +25C 24 20 0.0 0.5 TL -40C +85C 14 12 TL 0.0 0.5 1.0 -40C +85C 1.0 1.5 2.0 2.5 3.0 3.5 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Frequency (GHz) 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-100620 Rev. G SGA-6389 DC-4500 MHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency 21 |S | vs. Frequency 11 20 VD= 4.9 v, ID= 80 mA 0 -10 |S11| (dB) -20 -30 VD= 4.9 v, ID= 80 mA 15 |S21| (dB) 10 5 TL 0 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C TL -40 6 +25C -40C +85C 0 1 2 3 4 Frequency (GHz) 5 6 |S | vs. Frequency 12 |S | vs. Frequency 22 -10 -15 |S12| (dB) VD= 4.9 v, ID= 80 mA 0 VD= 4.9 v, ID= 80 mA -10 |S22| (dB) +25C -40C +85C -20 -25 -20 -30 TL -30 0 1 2 3 4 Frequency (GHz) 5 TL -40 +25C -40C +85C 6 0 1 2 3 4 Frequency (GHz) 5 6 95 90 VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 ohms * VD vs. Temperature for Constant ID = 80 mA 5.5 5.3 VD(Volts) 5.1 4.9 4.7 4.5 +85C 85 ID(mA) 80 75 -40C +25C 70 65 4.5 4.7 4.9 VD(Volts) 5.1 5.3 -40 -15 10 35 Temperature(C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100620 Rev. G SGA-6389 DC-4500 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit RBIAS VS 1 uF 1000 pF Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 SGA-6389 3 CB RF out 2 Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 13 8V 39 10 V 62 12 V 91 VS RBIAS A63 Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. LC CD CB CB Part Identification Marking 4 4 Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. A63 2 3 A63Z 2 2, 4 GND 1 2 3 1 2 1 1 3 3 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number Reel Size Devices/Reel See Application Note AN-075 for Package Outline Drawing SGA-6389 SGA-6389Z 13" 13" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100620 Rev. G |
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